师资队伍

赖李龙

2020-04-25  点击:[]

 

赖李龙,博士,1967年生,台湾清华大学学士和硕士,复旦大学材料科学博士。

主要经历:
1998年2月-1999年9月 汉磊科技 工程师
1999年9月- 2003年3月 茂德科技 工程师
2003年4月-2018年12月 中芯国际 技术专家
2019年1月-现在        芯恩集成电路 技术处长

Publication and Patents:
Publish 20 paper in conference, seminar and Journal.
Issue 17 patent and trade secret in SMIC career.
Give 7 speeches (tutorial) for invited seminar and conference.

近五年来从事科研工作的主要成果:
March 2019,  The in-depth investigation for the mechanism of e-Beam effect to MOS alternation by Nanoprobing capacitance-voltage analysis, CSTIC
November 2017, To Reveal Invisible Doping Defect by Nanoprobing Analysis, Simulation and Scanning Capacitance Microscopy, International Symposium of Testing and Failure Analysis (ISTFA)
2016, Microelectronics Reliability 2016 (Journal) - “Applications of the pulsed current-voltage (I-V) and capacitance-voltage (C-V) techniques for high-resistive gates in MOSFETs” , Microelectronics Reliability (Journal)
July 2016, The investigation of chemical shift of Silicon X-ray energy in different stoichiometry or structure with Microcalorimeter EDS, Microscopy and Microanalysis (USA)
2015, The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis, Microelectronics Reliability (Journal)
July 2015, The demonstrations and discussion for Static/Read/Write Noise Margin (SNM/RNM/WNM) via Nanoprobing to SRAM FA applications, International Symposium of Physical and Failure Analysis (IPFA),

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